METHOD OF MEASURING DIFFUSION OF BORON INTO SILICON FROM A LOCALIZED SURFACE SOURCE

被引：0
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作者：
BEVAN, OJ
TOWNSEND, WG
机构：
来源：
JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS | 1972年 / 5卷 / 07期
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D O I：
10.1088/0022-3735/5/7/029
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
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页码：704 / &
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