CHARACTERIZATION OF PURE GERMANIUM FOR DETECTOR FABRICATION

被引:24
作者
HALL, RN
机构
关键词
D O I
10.1109/TNS.1972.4326736
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:266 / &
相关论文
共 7 条
[1]  
BAERTSCH RD, 1972, IEEE T NUCL SCI, VNS19, P275
[2]  
BERNINGER WE, UNPUBLISHED DATA
[3]   ETCH PITS IN GERMANIUM AND THEIR RELATION TO HARDNESS [J].
DALE, JR ;
BRICE, JC .
SOLID-STATE ELECTRONICS, 1961, 3 (02) :105-&
[4]  
HALL RN, 1971, IEEE T NUCL SCI, VNS18, P160
[5]  
LLACER J, UNPUBLISHED COMMUNIC
[6]   ANALYSIS FOR SI CONTAMINATION IN GAP [J].
LUTHER, LC ;
VERLEUR, HW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (07) :1221-&
[7]   EPITAXIAL VAPOR GROWTH OF GE SINGLE CRYSTALS IN A CLOSED-CYCLE PROCESS [J].
MARINACE, JC .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1960, 4 (03) :248-255