SIMPLE-MODEL FOR THRESHOLD VOLTAGE IN A SHORT-CHANNEL IGFET

被引:49
作者
TROUTMAN, RR [1 ]
FORTINO, AG [1 ]
机构
[1] IBM CORP,DIV GEN TECHNOL,ESSEX JUNCTION,VT 05452
关键词
D O I
10.1109/T-ED.1977.18993
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1266 / 1268
页数:3
相关论文
共 3 条
[1]  
COTTRELL PE, 1976, 10TH ANN C CIRC SYST
[2]   SUBTHRESHOLD CHARACTERISTICS OF INSULATED-GATE FIELD-EFFECT TRANSISTORS [J].
TROUTMAN, RR ;
CHAKRAVARTI, SN .
IEEE TRANSACTIONS ON CIRCUIT THEORY, 1973, CT20 (06) :659-665
[3]   ION-IMPLANTED THRESHOLD TAILORING FOR INSULATED GATE FIELD-EFFECT TRANSISTORS [J].
TROUTMAN, RR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) :182-192