ELECTRICAL CHARACTERISTICS OF VERY THIN SIO2 DEPOSITED AT LOW SUBSTRATE TEMPERATURES

被引：39
作者：
BATEY, J
TIERNEY, E
NGUYEN, TN
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 04期
关键词：
D O I：
10.1109/EDL.1987.26583
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：148 / 150
页数：3
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