HOT-ELECTRON TRANSPORT EFFECTS IN FIELD-EFFECT TRANSISTORS (FET)

被引:0
|
作者
GRUBIN, HL
MCHUGH, TM
机构
来源
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:703 / 703
页数:1
相关论文
共 50 条
  • [41] DETERMINATION OF ELECTRON-ENERGY DISTRIBUTION IN A GAAS VERTICAL FIELD-EFFECT TRANSISTOR WITH HOT-ELECTRON INJECTION
    YAMASAKI, K
    DANIELSRACE, T
    LU, SS
    SCHAFF, WJ
    TASKER, PJ
    EASTMAN, LF
    APPLIED PHYSICS LETTERS, 1989, 54 (03) : 274 - 276
  • [42] INTRACOLLISIONAL FIELD-EFFECT IN QUASI-HOT ELECTRON-TRANSPORT
    ARORA, VK
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1985, 127 (01): : K95 - K97
  • [43] HOT-ELECTRON TRANSPORT IN SEMICONDUCTORS
    HANSCH, W
    SCHMEISER, C
    ZEITSCHRIFT FUR ANGEWANDTE MATHEMATIK UND PHYSIK, 1989, 40 (03): : 440 - 455
  • [44] HOT-ELECTRON TRANSPORT IN THE PLANE
    HEIBLUM, M
    PALEVSKI, A
    SIVAN, U
    UMBACH, CP
    SURFACE SCIENCE, 1990, 229 (1-3) : 155 - 157
  • [46] HOT-ELECTRON TRANSPORT EFFECTS IN LEAD-TELLURIDE
    CARVER, GP
    HOUSTON, BB
    BURKE, JR
    FERRY, DK
    SOLID STATE COMMUNICATIONS, 1976, 20 (11) : 1089 - 1095
  • [47] SUBPICOSECOND HOT-ELECTRON TRANSPORT
    GRONDIN, RO
    LUGLI, P
    FERRY, DK
    GRUBIN, HL
    PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1983, 439 : 18 - 25
  • [48] Electronic transport in field-effect transistors of sexithiophene
    Stallinga, P
    Gomes, HL
    Biscarini, F
    Murgia, M
    de Leeuw, DM
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (09) : 5277 - 5283
  • [49] Charge transport in oligothiophene field-effect transistors
    Torsi, L
    Dodabalapur, A
    Rothberg, LJ
    Fung, AWP
    Katz, HE
    PHYSICAL REVIEW B, 1998, 57 (04): : 2271 - 2275
  • [50] ANOMALOUS EFFECTS ON HOT-ELECTRON TRANSPORT AND ABLATION STRUCTURE
    YABE, T
    MIMA, K
    YOSHIKAWA, K
    TAKABE, H
    HAMANO, M
    NUCLEAR FUSION, 1981, 21 (07) : 803 - 816