ELECTRONIC-STRUCTURE OF (111) SURFACE OF SILICON

被引：20
作者：
BORTOLANI, V
CALANDRA, C
KELLY, MJ
机构：
[1] UNIV MODENA, INST FIS, 41100 MODENA, ITALY
[2] CAVENDISH LAB, MADINGLEY RD, CAMBRIDGE CB3 OHE, ENGLAND
来源：
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1973年 / 6卷 / 18期
关键词：
D O I：
10.1088/0022-3719/6/18/002
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：L349 / L353
页数：5
相关论文
共 18 条
[1]   ENERGY STRUCTURE IN PHOTOELECTRIC EMISSION FROM CS-COVERED SILICON AND GERMANIUM [J].
ALLEN, FG ;
GOBELI, GW .
PHYSICAL REVIEW, 1966, 144 (02) :558-&
[2]   EMPIRICAL THIRD NEIGHBOUR LCAO ENERGY BANDS OF SILICON [J].
ALSTRUP, I ;
JOHANSEN, K .
PHYSICA STATUS SOLIDI, 1968, 28 (02) :555-&
[3]   SURFACE BANDS OF SILICON (III) SLABS BY A LCAO METHOD [J].
ALSTRUP, I .
SURFACE SCIENCE, 1970, 20 (02) :335-&
[4]   CALCULATION OF SURFACE STATES OF SILICON [J].
ALSTRUP, I .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1971, 45 (01) :209-&
[5]  
DAVISON SG, 1970, SOLID STATE PHYS, V25, P1
[6]   FOURIER EXPANSION FOR ELECTRONIC ENERGY BANDS IN SILICON AND GERMANIUM [J].
DRESSELHAUS, G ;
DRESSELHAUS, MS .
PHYSICAL REVIEW, 1967, 160 (03) :649-+
[7]   ELECTRONIC-STRUCTURE BASED ON LOCAL ATOMIC ENVIRONMENT FOR TIGHT-BINDING BANDS [J].
HAYDOCK, R ;
HEINE, V ;
KELLY, MJ .
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (20) :2845-&
[8]   SURFACE DENSITIES OF STATES IN TIGHT-BINDING APPROXIMATION [J].
HAYDOCK, R ;
KELLY, MJ .
SURFACE SCIENCE, 1973, 38 (01) :139-148
[9]   ON GENERAL THEORY OF SURFACE STATES AND SCATTERING OF ELECTRONS IN SOLIDS [J].
HEINE, V .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 81 (520) :300-&
[10]   ELECTRONS AT SURFACES OF SOLIDS [J].
HEINE, V .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1972, 331 (1586) :307-320
12