TEMPERATURE-DEPENDENCE OF THE THIN-FILM SILICON-ON-INSULATOR FIELD-EFFECT TRANSISTOR CURRENT CHARACTERISTICS BASED ON FULL SOLUTION FOR THE ONE-DIMENSIONAL MISIS STRUCTURE

A model for the silicon-on-insulator field effect transistor in a thin layer is presented which is not restricted by the charge sheet assumption and does not omit the substrate voltage drop. It is based on full determination of all surface potentials of the one-dimensional MISIS structure. Threshold and saturation voltages and the current-voltage characteristics are expressed in terms of the corresponding potentials. Comparison with our two-dimensional simulations shows that the model accounts correctly for the influence of the (thin) Si-layer thickness and a positive back gate bias. The model is used to analyse the temperature dependence of the current-voltage characteristics.