DETERMINATION OF IMPLANTATION PROFILES IN SOLIDS BY SECONDARY ION MASS-SPECTROMETRY

[1] Cairns J. A., 1970, European conference on ion implantation, P203

[2] Cairns J. A., 1971, Radiation Effects, V7, P167, DOI 10.1080/00337577108230984

[3] RANGE AND DISTRIBUTION OF IMPLANTED BORON IN SILICON [J]. APPLIED PHYSICS LETTERS, 1968, 13 (07) : 243 - &

[4] GAMO K, 1971, 2 P INT C ION IMPL S, P459

[5] MAUL J, 1972, P37 GSF BER

[6] Nelson R. S., 1970, Radiation Effects, V6, P131, DOI 10.1080/00337577008235055

[7] PISTRYAK VM, 1970, SOV PHYS-SOLID STATE, V12, P1005

[8] RUGE I, 1971, 2 P INT C ION IMPL S

[9] SEIDEL TE, 1971, 2 P INT C ION IMPL S, P47

[10] ANALYSIS OF SURFACES UTILIZING SPUTTER ION SOURCE INSTRUMENTS [J]. SURFACE SCIENCE, 1971, 25 (01) : 147 - &

[1] Cairns J. A., 1970, European conference on ion implantation, P203

[2] Cairns J. A., 1971, Radiation Effects, V7, P167, DOI 10.1080/00337577108230984

[3] RANGE AND DISTRIBUTION OF IMPLANTED BORON IN SILICON [J]. APPLIED PHYSICS LETTERS, 1968, 13 (07) : 243 - &

[4] GAMO K, 1971, 2 P INT C ION IMPL S, P459

[5] MAUL J, 1972, P37 GSF BER

[6] Nelson R. S., 1970, Radiation Effects, V6, P131, DOI 10.1080/00337577008235055

[7] PISTRYAK VM, 1970, SOV PHYS-SOLID STATE, V12, P1005

[8] RUGE I, 1971, 2 P INT C ION IMPL S

[9] SEIDEL TE, 1971, 2 P INT C ION IMPL S, P47

[10] ANALYSIS OF SURFACES UTILIZING SPUTTER ION SOURCE INSTRUMENTS [J]. SURFACE SCIENCE, 1971, 25 (01) : 147 - &