LONG-WAVELENGTH (1072 NM) STRAINED INGAAS QUANTUM-WELL LASERS GROWN ON 1.0-DEGREES MISORIENTED (111)B GAAS

被引：11
作者：
ISHIHARA, A
WATANABE, H
机构：
[1] Research and Development Center, Konica Corporation, Hino, Tokyo, 191
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 3A期
关键词：
LASER DIODES; GAAS (111)B; MISORIENTED; INGAAS; STRAINED QUANTUM WELL; MBE;
D O I：
10.1143/JJAP.33.1361
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The operation of InGaAs/GaAs/AlGaAs strained quantum-well lasers on 1.0-degrees misoriented (111)B GaAs substrates is reported. The laser structures are grown by molecular beam epitaxy (MBE). Threshold current densities of 164 A/cm2 at 1072 nm were obtained for broad-area, uncoated devices with cavity lengths of 700 mum.
引用
收藏
页码：1361 / 1362
页数：2
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