EFFECT OF ELECTRON IRRADIATION ON LITHIUM-DOPED SILICON

[1] RECOVERY BEHAVIOR OF SI(LI) JUNCTIONS AFTER GAMMA IRRADIATION [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (13) : 6023 - &

[2] IRRADIATION DAMAGE IN GERMANIUM AND SILICON DUE TO ELECTRONS AND GAMMA RAYS [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1310 - 1316

[3] RADIATION DAMAGE IN LITHIUM DOPED SILICON [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1967, NS14 (06) : 110 - +

[4] FAN HY, 1954, C DEFECTS CRYSTALLIN

[5] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J]. PHYSICAL REVIEW, 1954, 96 (01): : 28 - 35

[6] PELL EM, 1960, SOLID STATE PHYS, V1, P261

[7] 300 DEGREES K ANNEALING OF ELECTRON DAMAGE IN LITHIUM-DOPED SILICON [J]. APPLIED PHYSICS LETTERS, 1969, 15 (03) : 93 - +

[8] VAVILOV VS, 1964, RADIATION DAMAGE SEM, P115

[9] VAVILOV VS, 1963, J PHYS SOC JAPAN S3, V18, P236

[10] SPIN RESONANCE IN ELECTRON IRRADIATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1198 - 1203

[1] RECOVERY BEHAVIOR OF SI(LI) JUNCTIONS AFTER GAMMA IRRADIATION [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (13) : 6023 - &

[2] IRRADIATION DAMAGE IN GERMANIUM AND SILICON DUE TO ELECTRONS AND GAMMA RAYS [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1310 - 1316

[3] RADIATION DAMAGE IN LITHIUM DOPED SILICON [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1967, NS14 (06) : 110 - +

[4] FAN HY, 1954, C DEFECTS CRYSTALLIN

[5] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J]. PHYSICAL REVIEW, 1954, 96 (01): : 28 - 35

[6] PELL EM, 1960, SOLID STATE PHYS, V1, P261

[7] 300 DEGREES K ANNEALING OF ELECTRON DAMAGE IN LITHIUM-DOPED SILICON [J]. APPLIED PHYSICS LETTERS, 1969, 15 (03) : 93 - +

[8] VAVILOV VS, 1964, RADIATION DAMAGE SEM, P115

[9] VAVILOV VS, 1963, J PHYS SOC JAPAN S3, V18, P236

[10] SPIN RESONANCE IN ELECTRON IRRADIATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1198 - 1203