MOVPE OF ALN AND GAN BY USING NOVEL PRECURSORS

被引：55

作者：

HO, KL

JENSEN, KF

HWANG, JW

GLADFELTER, WL

EVANS, JF

机构：

[1] MIT,DEPT CHEM ENGN,CAMBRIDGE,MA 02139

[2] UNIV MINNESOTA,DEPT CHEM,MINNEAPOLIS,MN 55455

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 107卷 / 1-4期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0022-0248(91)90489-R

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The technique of low pressure MOVPE has been used to grow thin films of AIN and GaN on silicon and (0001) sapphire substrates using the single-source precursors diethylaluminum azide [Et2AIN3]3 (DEAA) and diethylgallium azide [Et2GaN3]3 (DEGA). In-situ growth rate measurements have been performed for AIN growth on Si substrates. For comparison with conventional MOVPE growth, epitaxial films of Al(x)Ga1-(x)N have also been deposited from triethylgallium (TEG), triethylaluminum (TEA1) and NH3 under similar conditions. The properties of the grown films are discussed in terms of precursor selection and growth conditions.

引用

页码：376 / 380

页数：5

共 12 条

[1] EFFECTS OF THE BUFFER LAYER IN METALORGANIC VAPOR-PHASE EPITAXY OF GAN ON SAPPHIRE SUBSTRATE [J].