LOW-THRESHOLD 1.25-MU-M VAPOR-GROWN INGAASP CW LASERS

被引：65
作者：
OLSEN, GH
NUESE, CJ
ETTENBERG, M
机构：
[1] RCA Laboratories, Princeton
来源：
APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 04期
关键词：
D O I：
10.1063/1.90774
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Vapor-grown double-heterojunction lasers of InGaAsP/InP have been prepared with cw room-temperature threshold currents of 85 mA and differential quantum efficiencies exceeding 50% at 1.25 μm. From several lasers, fundamentaal-lateral- and fundamental-longitudinal-mode operation have been observed over moderate current ranges. Over 1000 h of room-temperature cw operation has been observed to date without significant degradation.
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页码：262 / 264
页数：3
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