ELECTRICAL RECOMBINATION BEHAVIOR AT DISLOCATIONS IN GALLIUM-PHOSPHIDE AND SILICON

被引：14
作者：
BOOKER, GR
OURMAZD, A
DARBY, DB
机构：
来源：
JOURNAL DE PHYSIQUE | 1979年 / 40卷
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D O I：
10.1051/jphyscol:1979604
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页码：19 / 21
页数：3
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[6]   CARRIER RECOMBINATION AT DISLOCATIONS IN EPITAXIAL GALLIUM-PHOSPHIDE LAYERS [J].
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