ANALYSIS AND DESIGN OF AN X-BAND ACTIVELY COMPENSATED IMPATT DIODE AMPLIFIER

被引：5

作者：

BAINS, AS

AITCHISON, CS

机构：

[1] Electronics Department, Chelsea College, Pulton Place, London, SW6 5PR, U.K.

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1979年 / 27卷 / 01期

关键词：

D O I：

10.1109/TMTT.1979.1129552

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper shows how broad-banding of an IMPATT diode amplifier can be achieved using a circuit technique known as active reactance compensation. Theoretical analysis and experimental results both show that the gain-bandwidth products of an uncompensated IMPATT amplifier improves from G1/2B = k to G1/4B = 2k (where k is a constant) for the same amplifier actively conpensated. The measured 3 -dB bandwidth of 230 MHz for a 9.0 -GHz amplifier having a gain of 10 dB is improved to 780 MHz at the same gain. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：17 / 23

页数：7

共 12 条

[1] COMPUTATION OF GAIN-BANDWIDTH PERFORMANCE OF AN X-BAND ACTIVE REACTANCE COMPENSATED IMPATT AMPLIFIER [J].