INTERFACIAL OXIDE, GRAIN-SIZE, AND HYDROGEN PASSIVATION EFFECTS ON POLYSILICON EMITTER TRANSISTORS

被引：15

作者：

POTYRAJ, PA ^{[1
]}

CHEN, DL ^{[1
]}

HATALIS, MK ^{[1
]}

GREVE, DW ^{[1
]}

机构：

[1] CARNEGIE MELLON UNIV,DEPT ELECT ENGN & COMP SCI,PITTSBURGH,PA 15213

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 08期

关键词：

D O I：

10.1109/16.2556

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1334 / 1343

页数：10

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