CHARACTERIZATION OF SEMICONDUCTOR STRUCTURES BY HIGH-RESOLUTION X-RAY-DIFFRACTION

被引：0

作者：

SANZHERVAS, A ^{[1
]}

ABRIL, EJ ^{[1
]}

PAZ, DI ^{[1
]}

DEBENITO, G ^{[1
]}

LLORENTE, C ^{[1
]}

AGUILAR, M ^{[1
]}

LOPEZ, M ^{[1
]}

机构：

[1] UNIV VALLADOLID,ESCUELA TECN SUPER INGN TELECOMMUN,DEPT TEOR SENAL & COMMUN & INGN TELEMAT,VALLADOLID,SPAIN

来源：

MATERIALS SCIENCE AND TECHNOLOGY | 1995年 / 11卷 / 01期

关键词：

D O I：

10.1179/mst.1995.11.1.72

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A simulation program based on the Takagi-Taupin equations from the dynamical theory of X-ray diffraction has been developed. The novelty of the program lies mainly in that it includes the elastic distortion of coherent epitaxial layers by employing a model based on the elasticity theory of materials. The simulation model is fairly flexible, allowing the calculation of any symmetric or asymmetric reflection, any substrate orientation graded and relaxed layers, and instrumental effects. Some simulation results for different materials and multilayered structures are presented. A preliminary study of the influence of beam dispersion and detection noise has also been carried oat. (C) 1995 The Institute of Materials.

引用

页码：72 / 79

页数：8

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