THE ROLE OF THE BIEXCITON IN A DYNAMIC DENSITY-MATRIX THEORY OF THE SEMICONDUCTOR BAND-EDGE

被引：122
作者：
AXT, VM
STAHL, A
机构：
[1] Institut für Theoretische Physik, RWTH Aachen, Aachen
来源：
ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER | 1994年 / 93卷 / 02期
关键词：
D O I：
10.1007/BF01316964
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We describe the dielectric response of the semiconductor band edge in a dynamic density matrix model. Our treatment is based on a set of chi(3)-relevant constitutive equations involving two-, four- and six-point density matrices. We demonstrate that under certain conditions all contributions to the third order susceptibility can be expressed in terms of excitonic and biexcitonic transitions. As a first application of these chi(3)-relevant equations we investigate the influence of the biexciton on the optical Stark effect in CuCl. We calculate shifts and lineshapes. Our results turn out to be in excellent agreement with experiments as well as with other theoretical predictions.
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页码：205 / 211
页数：7
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