BAND RENORMALIZATION AND DYNAMIC SCREENING IN NEAR BAND-GAP FEMTOSECOND OPTICAL PROBING OF INGAAS

被引：0

作者：

BAIR, JE ^{[1
]}

COHEN, D ^{[1
]}

KRUSIUS, JP ^{[1
]}

POLLOCK, CR ^{[1
]}

机构：

[1] CORNELL UNIV,SCH APPL & ENGN PHYS,ITHACA,NY 14853

来源：

SOLID STATE COMMUNICATIONS | 1994年 / 92卷 / 03期

关键词：

SEMICONDUCTORS; ELECTRON ELECTRON INTERACTIONS; ELECTRONIC TRANSPORT; OPTICAL PROPERTIES; TIME-RESOLVED OPTICAL SPECTROSCOPIES;

D O I：

10.1016/0038-1098(94)90882-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effect of band renormalization and dynamic screening in near band edge femtosecond optical probing of In0.53Ga0.47As thin films has been investigated quantitatively. Simulated results, obtained from an ensemble Monte Carlo formulation, are in excellent agreement with measured equal pulse correlation data only if both processes are included. Band renormalization is found to be roughly twice as important as dynamic screening for these conditions.

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页码：231 / 236

页数：6

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