EPITAXIAL REGROWTH OF THIN AMORPHOUS GAAS-LAYERS

被引：22

作者：

GRIMALDI, MG

PAINE, BM

MAENPAA, M

NICOLET, MA

SADANA, DK

机构：

[1] CALTECH,PASADENA,CA 91125

[2] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 01期

关键词：

D O I：

10.1063/1.92520

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：70 / 72

页数：3

共 8 条

[1] TELLURIUM IMPLANTATION IN GAAS [J].

EISEN, FH ;

WELCH, BM ;

MULLER, H ;

GAMO, K ;

INADA, T ;

MAYER, JW .

SOLID-STATE ELECTRONICS, 1977, 20 (03) :219-223

[2] REORDERING OF IMPLANTED AMORPHOUS LAYERS IN GAAS [J].

GAMO, K ;

INADA, T ;

MAYER, JW ;

EISEN, FH ;

RHODES, CG .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 33 (02) :85-89

[3] SELENIUM IMPLANTATION IN GAAS [J].

GAMO, K ;

INADA, T ;

KREKELER, S ;

MAYER, JW ;

EISEN, FH ;

WELCH, BM .

SOLID-STATE ELECTRONICS, 1977, 20 (03) :213-217

[4]

GRIMALDI MG, UNPUBLISHED

[5] ELECTRICAL, RUTHERFORD BACKSCATTERING AND TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF FURNACE ANNEALED ZINC IMPLANTED GAAS [J].

KULAR, SS ;

SEALY, BJ ;

STEPHENS, KG ;

SADANA, D ;

BOOKER, GR .

SOLID-STATE ELECTRONICS, 1980, 23 (08) :831-&

[6] ION-BEAM-INDUCED ANNEALING EFFECTS IN GAAS [J].

WILLIAMS, JS ;

AUSTIN, MW .

NUCLEAR INSTRUMENTS & METHODS, 1980, 168 (1-3) :307-312

[7] LOW-TEMPERATURE EPITAXIAL REGROWTH OF ION-IMPLANTED AMORPHOUS GAAS [J].

WILLIAMS, JS ;

AUSTIN, MW .

APPLIED PHYSICS LETTERS, 1980, 36 (12) :994-996

[8]

WILLIAMS JS, 1980, P THIN FILM INTERFAC, V80, P187

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