OXIDATION OF SI(111), 7X7 AND 2X1 - A COMPARISON

被引：32
作者：
SU, CY
SKEATH, PR
LINDAU, I
SPICER, WE
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 18卷 / 03期
关键词：
D O I：
10.1116/1.570974
中图分类号：
O59 [应用物理学];
学科分类号：
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页码：843 / 846
页数：4
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[1]   ATOMIC AND ELECTRONIC-STRUCTURE OF THE 7X7 RECONSTRUCTED SI(111) SURFACE [J].
CHADI, DJ ;
BAUER, RS ;
WILLIAMS, RH ;
HANSSON, GV ;
BACHRACH, RZ ;
MIKKELSEN, JC ;
HOUZAY, F ;
GUICHAR, GM ;
PINCHAUX, R ;
PETROFF, Y .
PHYSICAL REVIEW LETTERS, 1980, 44 (12) :799-802
[2]   LOW-ENERGY ELECTRON-DIFFRACTION FROM SI(111)-2 X 1 - THEORY AND EXPERIMENT [J].
FEDER, R ;
MONCH, W ;
AUER, PP .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (05) :L179-L184
[3]   ELECTRON-SPECTROSCOPIC STUDIES OF THE EARLY STAGES OF THE OXIDATION OF SI [J].
GARNER, CM ;
LINDAU, I ;
SU, CY ;
PIANETTA, P ;
SPICER, WE .
PHYSICAL REVIEW B, 1979, 19 (08) :3944-3956
[4]   NEW PHENOMENON IN ABSORPTION OF OXYGEN ON SILICON [J].
GARNER, CM ;
LINDAU, I ;
SU, CY ;
PIANETTA, P ;
MILLER, JN ;
SPICER, WE .
PHYSICAL REVIEW LETTERS, 1978, 40 (06) :403-406
[5]   STRUCTURE DEPENDENT OXIDATION OF CLEAN SI(111) SURFACES [J].
GUICHAR, GM ;
SEBENNE, CA ;
GARRY, GA ;
BALKANSKI, M .
SURFACE SCIENCE, 1976, 58 (02) :374-378
[6]   SURFACE RECONSTRUCTION ON SEMICONDUCTORS [J].
HARRISON, WA .
SURFACE SCIENCE, 1976, 55 (01) :1-19
[7]   ELECTRON ORBITAL ENERGIES OF OXYGEN ADSORBED ON SILICON SURFACES AND OF SILICON DIOXIDE [J].
IBACH, H ;
ROWE, JE .
PHYSICAL REVIEW B, 1974, 10 (02) :710-718
[8]   ELECTRONIC-TRANSITIONS OF OXYGEN ADSORBED ON CLEAN SILICON (111) AND (100) SURFACES [J].
IBACH, H ;
ROWE, JE .
PHYSICAL REVIEW B, 1974, 9 (04) :1951-1957
[9]   ADSORPTION OF OXYGEN ON SILICON (111) SURFACES .1. [J].
IBACH, H ;
HORN, K ;
DORN, R ;
LUTH, H .
SURFACE SCIENCE, 1973, 38 (02) :433-454
[10]   OXYGEN ON CLEAVED SILICON (111) - EFFECTS OF ATOMIC STEPS AND RESIDUAL GASES [J].
KASUPKE, N ;
HENZLER, M .
SURFACE SCIENCE, 1980, 92 (2-3) :407-416
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