EVIDENCE FOR SPACE-CHARGE IN ATOMIC LAYER EPITAXY ZNS-MN ALTERNATING-CURRENT THIN-FILM ELECTROLUMINESCENT DEVICES

被引:28
作者
DOUGLAS, AA
WAGER, JF
MORTON, DC
KOH, JB
HOGH, CP
机构
[1] USA,LAB COMMAND,ELECTR TECHNOL & DEVICES LAB,FT MONMOUTH,NJ 07703
[2] VITRON INC,EATONTOWN,NJ 07724
关键词
D O I
10.1063/1.353903
中图分类号
O59 [应用物理学];
学科分类号
摘要
Electrical and optical measurements of ZnS:Mn alternating-current thin-film electroluminescent (ACTFEL) devices grown by atomic layer epitaxy provide evidence for the existence of space charge within the bulk ZnS layer. Blue luminescence is observed during the falling edge of an applied voltage pulse when the ACTFEL device is operated at low temperature. This blue luminescence is attributed to donor-acceptor pair radiative recombination in which chlorine is identified as the donor and a zinc vacancy as the acceptor. This luminescence identification leads to determination of the origin of space charge as arising from impact ionization of the zinc vacancy.
引用
收藏
页码:296 / 299
页数:4
相关论文
共 16 条
[1]   EXPERIMENTAL RESULTS ON THE STABILITY OF AC THIN-FILM ELECTROLUMINESCENT DEVICES [J].
ALT, PM ;
DOVE, DB ;
HOWARD, WE .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) :5186-5199
[2]   CHARGE-TRANSFER IN ZNS-TYPE ELECTROLUMINESCENCE REVISITED [J].
BRINGUIER, E ;
GEOFFROY, A .
APPLIED PHYSICS LETTERS, 1992, 60 (10) :1256-1258
[3]   CHARGE-TRANSFER IN ZNS-TYPE ELECTROLUMINESCENCE [J].
BRINGUIER, E .
JOURNAL OF APPLIED PHYSICS, 1989, 66 (03) :1314-1325
[4]  
CHEN YS, 1972, J APPL PHYS, V43, P4089, DOI 10.1063/1.1660878
[5]   BULK DEEP TRAPS IN ZNS AND THEIR RELATION TO HIGH-FIELD ELECTROLUMINESCENCE [J].
GEOFFROY, A ;
BRINGUIER, E .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (9A) :A131-A133
[6]   A SIMPLE-MODEL FOR THE HYSTERETIC BEHAVIOR OF ZNS-MN THIN-FILM ELECTROLUMINESCENT DEVICES [J].
HOWARD, WE ;
SAHNI, O ;
ALT, PM .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) :639-647
[7]   A COMPUTATIONALLY SIMPLE-MODEL FOR HYSTERETIC THIN-FILM ELECTROLUMINESCENT DEVICES [J].
JAREM, JM ;
SINGH, VP .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (11) :1834-1841
[8]  
KROGER FA, 1973, CHEM IMPERFECT CRYST, V2, P741
[9]   CHEMICAL VAPOR-DEPOSITION OF ZNS-MN ELECTROLUMINESCENT FILMS IN A LOW-PRESSURE HALOGEN TRANSPORT-SYSTEM [J].
MIKAMI, A ;
TERADA, K ;
OKIBAYASHI, K ;
TANAKA, K ;
YOSHIDA, M ;
NAKAJIMA, S .
JOURNAL OF CRYSTAL GROWTH, 1991, 110 (03) :381-394
[10]   SIMPLE-MODEL FOR THE HYSTERETIC BEHAVIOR OF THIN-FILM ELECTROLUMINESCENT DEVICES [J].
NEYTS, KA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (12) :2604-2611