SWITCHING OF CONDUCTIVITY WITH MEMORY ELEMENTS IN SILICON MDS-STRUCTURES WITH SAMARIUM FLUORIDE FILMS

被引：0

|

作者：

ROZHKOV, VA ^{[1
]}

ROMANENKO, NN ^{[1
]}

机构：

[1] SAMARA STATE UNIV,SAMARA,RUSSIA

来源：

PISMA V ZHURNAL TEKHNICHESKOI FIZIKI | 1992年 / 18卷 / 15期

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中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：60 / 63

页数：4

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