SWITCHING OF CONDUCTIVITY WITH MEMORY ELEMENTS IN SILICON MDS-STRUCTURES WITH SAMARIUM FLUORIDE FILMS

被引：0
|
作者：
ROZHKOV, VA [1 ]
ROMANENKO, NN [1 ]
机构：
[1] SAMARA STATE UNIV,SAMARA,RUSSIA
来源：
PISMA V ZHURNAL TEKHNICHESKOI FIZIKI | 1992年 / 18卷 / 15期
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暂无
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：60 / 63
页数：4
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