INITIAL-STAGE OF SIO2/SI INTERFACE FORMATION ON SI(111) SURFACE

被引：0

作者：

NOHIRA, H

TAMURA, Y

OGAWA, H

HATTORI, T

机构：

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 1992年 / E75C卷 / 07期

关键词：

OXIDATION; SILICON; H-TERMINATION; XPS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The initial stages of SiO2/Si interface formation on a Si(111) surface were investigated at 300-degrees-C in dry oxygen with a pressure of 133 Pa. It was found that the SiO2/Si interfacial transition layer is formed in three steps characterized by three different oxidation rates.

引用

页码：757 / 763

页数：7