A REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY OF ALAS/GAAS TILTED SUPERLATTICE GROWTH BY MIGRATION-ENHANCED EPITAXY

被引：19
作者：
CHALMERS, SA [1 ]
GOSSARD, AC [1 ]
PETROFF, PM [1 ]
KROEMER, H [1 ]
机构：
[1] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 03期
关键词：
D O I：
10.1116/1.585039
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：431 / 435
页数：5
相关论文
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