GROWTH VELOCITY VARIATIONS DURING METALORGANIC VAPOR-PHASE EPITAXY THROUGH AN EPITAXIAL SHADOW MASK

被引：20

作者：

DEMEESTER, P

BUYDENS, L

VANDAELE, P

机构：

[1] University of Gent, IMEC, Laboratory of Electromagnetism and Acoustics, B-9000 Gent

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 02期

关键词：

D O I：

10.1063/1.103973

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel shadow masking technique is proposed for the local variation of growth velocity in GaAs/AlGaAs structures grown on GaAs by metalorganic vapor phase epitaxy. This mask makes use of epitaxially grown spacer and mask layers and windows in the mask are lithographically defined. This results in a highly accurate and reproducible shadow mask which can be removed by lift-off. Growth velocity variations up to 50% have been observed. The application of this technique to the coupling of passive and active waveguide structures is proposed.

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页码：168 / 170

页数：3

相关论文

共 17 条

[1] APPLICATION OF ORGANOMETALLIC VAPOR-PHASE EPITAXY ON PATTERNED SUBSTRATES FOR A NEW MONOLITHIC LASER WAVE-GUIDE BUTT COUPLING TECHNIQUE [J].

AZOULAY, R ;

REMIENS, D ;

MENIGAUX, L ;

DUGRAND, L .

APPLIED PHYSICS LETTERS, 1989, 54 (19) :1857-1858

[2] NEW LATERALLY SELECTIVE GROWTH TECHNIQUE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

BEDAIR, SM ;

TISCHLER, MA ;

KATSUYAMA, T .

APPLIED PHYSICS LETTERS, 1986, 48 (01) :30-32

[3] PATTERNED QUANTUM WELL HETEROSTRUCTURES GROWN BY OMCVD ON NON-PLANAR SUBSTRATES - APPLICATIONS TO EXTREMELY NARROW SQW LASERS [J].

BHAT, R ;

KAPON, E ;

HWANG, DM ;

KOZA, MA ;

YUN, CP .

JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :850-856

[4] THICKNESS VARIATIONS DURING MOVPE GROWTH ON PATTERNED SUBSTRATES [J].

BUYDENS, L ;

DEMEESTER, P ;

VANACKERE, M ;

ACKAERT, A ;

VANDAELE, P .

JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (04) :317-321

[5] GROWTH-BEHAVIOR DURING NONPLANAR METALORGANIC VAPOR-PHASE EPITAXY [J].

DEMEESTER, P ;

VANDAELE, P ;

BAETS, R .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (07) :2284-2290

[6]

DEMEESTER P, IN PRESS J CRYST GRO

[7] LOW-THRESHOLD QUANTUM WELL LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION ON NONPLANAR SUBSTRATES [J].

DZURKO, KM ;

MENU, EP ;

BEYLER, CA ;

OSINSKI, JS ;

DAPKUS, PD .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (06) :1450-1458

[8] GAAS/GAALAS QUANTUM-WELL LASER WITH A LATERAL SPATIAL VARIATION IN THICKNESS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

FEKETE, D ;

BOUR, D ;

BALLANTYNE, JM ;

EASTMAN, LF .

APPLIED PHYSICS LETTERS, 1987, 50 (11) :635-637

[9] A STUDY OF THE ORIENTATION DEPENDENCE OF GA(AL)AS GROWTH BY MOVPE [J].

HERSEE, SD ;

BARBIER, E ;

BLONDEAU, R .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :310-320

[10] SCALING OF GAAS/ALGAAS LASER-DIODES FOR SUBMILLIAMPERE THRESHOLD CURRENT [J].

MARCLAY, E ;

ARENT, DJ ;

HARDER, C ;

MEIER, HP ;

WALTER, W ;

WEBB, DJ .

ELECTRONICS LETTERS, 1989, 25 (14) :892-894