DEFECTS IN SILICON PRE-AMORPHISED BY GERMANIUM IMPLANTATION AFTER RAPID THERMAL ANNEALING INVESTIGATED BY TRANSMISSION ELECTRON-MICROSCOPY

被引：0

作者：

MEEKISON, CD ^{[1
]}

GOLD, DP ^{[1
]}

BOOKER, GR ^{[1
]}

HILL, C ^{[1
]}

BOYS, DR ^{[1
]}

机构：

[1] PLESSEY RES CASWELL LTD, ALLEN CLARK RES CTR, TOWCESTER NN12 8EQ, NORTHANTS, ENGLAND

来源：

INSTITUTE OF PHYSICS CONFERENCE SERIES | 1989年 / 100期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Silicon specimens were implanted with 400 keV Ge+, and various thickness of the amorphised layer were removed by etching. Rapid thermal annealing at 1086-degrees-C was performed. TEM showed that dislocation loops were present. The diameters and densities were not significantly dependent on amorphous layer thickness. Coarsening of loops with increasing annealing time occurred. The number of interstitial atoms contained in the loops was constant except for an increase at the longest time (100 s). We deduce that extra interstitials are supplied from deeper in the specimen or by oxidation at the surface.

引用

页码：507 / 512

页数：6

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