ANALYSIS OF MOSFET DEGRADATION DUE TO HOT-ELECTRON STRESS IN TERMS OF INTERFACE-STATE AND FIXED-CHARGE GENERATION

被引：46

作者：

SHABDE, S

BHATTACHARYYA, A

KAO, RS

MULLER, RS

机构：

[1] SIGNET CORP,PHILIPS RES LABS,SUNNYVALE,CA 94088

[2] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720

来源：

SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 11期

关键词：

D O I：

10.1016/0038-1101(88)90007-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1603 / 1610

页数：8

共 33 条

[1] RELATIONSHIP BETWEEN MOSFET DEGRADATION AND HOT-ELECTRON-INDUCED INTERFACE-STATE GENERATION
HSU, FC
TAM, S
IEEE ELECTRON DEVICE LETTERS, 1984, 5 (02) : 50 - 52
[2] A MODEL FOR HOT-ELECTRON-INDUCED MOSFET LINEAR-CURRENT DEGRADATION BASED ON MOBILITY REDUCTION DUE TO INTERFACE-STATE GENERATION
CHUNG, JE
KO, PK
HU, CM
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (06) : 1362 - 1370
[3] MOSFET DEGRADATION DURING SUBSTRATE HOT-ELECTRON STRESS
ZHAO, SP
TAYLOR, S
MCPHIE, A
MICROELECTRONICS JOURNAL, 1994, 25 (07) : 515 - 522
[4] Interface state generation mechanism in MOSFET's during substrate hot-electron injection
Yasuda, Naoki
Nakamura, Hiroshi
Taniguchi, Kenji
Hamaguchi, Chihiro
Kakumu, Masakazu
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1988, 27 (12): : 2395 - 2397
[5] N-MOSFET DEGRADATION AND AGING DUE TO HOT-ELECTRON TRAPPING
SAMMAN, A
ROBLIN, P
BIBYK, SB
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (08) : C361 - C361
[6] STRUCTURE-ENHANCED MOSFET DEGRADATION DUE TO HOT-ELECTRON INJECTION
HSU, FC
GRINOLDS, HR
IEEE ELECTRON DEVICE LETTERS, 1984, 5 (03) : 71 - 74
[7] GATE OXIDE CHARGE-TO-BREAKDOWN CORRELATION TO MOSFET HOT-ELECTRON DEGRADATION
DAVIS, M
LAHRI, R
IEEE ELECTRON DEVICE LETTERS, 1988, 9 (04) : 183 - 185
[8] STRUCTURE-ENHANCED MOSFET DEGRADATION DUE TO HOT-ELECTRON INJECTION - COMMENTS
PIMBLEY, JM
IEEE ELECTRON DEVICE LETTERS, 1984, 5 (07) : 256 - 258
[9] STRUCTURE-ENHANCED MOSFET DEGRADATION DUE TO HOT-ELECTRON INJECTION - REPLY
HSU, FC
IEEE ELECTRON DEVICE LETTERS, 1984, 5 (07) : 258 - 260
[10] MECHANISM OF DEGRADATION OF LDD MOSFETS DUE TO HOT-ELECTRON STRESS
BHATTACHARYYA, A
SHABDE, SN
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (07) : 1156 - 1158

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