ON THE ORIGIN OF CATHODOLUMINESCENCE CONTRAST PHENOMENA IN SEMIINSULATING GAAS

被引:5
作者
KOSCHEK, G
LAKNER, H
KUBALEK, E
机构
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1988年 / 106卷 / 02期
关键词
D O I
10.1002/pssa.2211060238
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
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页码:651 / 658
页数:8
相关论文
共 18 条
[1]   DIRECT OBSERVATION OF THE PRINCIPAL DEEP LEVEL (EL2) IN UNDOPED SEMI-INSULATING GAAS [J].
BROZEL, MR ;
GRANT, I ;
WARE, RM ;
STIRLAND, DJ .
APPLIED PHYSICS LETTERS, 1983, 42 (07) :610-612
[2]  
Dussac M., 1985, Defect Recognition and Image Processing in III-V Compounds. Proceedings of the International Symposium, P209
[3]   STOICHIOMETRY OF MELT-GROWN N-TYPE GAAS AS REVEALED BY PHOTOLUMINESCENCE MEASUREMENTS [J].
GUISLAIN, HJ ;
DEWOLF, L ;
CLAUWS, P .
JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (05) :541-568
[4]   LUMINESCENCE AND EXCITATION-SPECTRA OF EXCITON EMISSION IN GAAS [J].
HEIM, U ;
HIESINGE.P .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1974, 66 (02) :461-470
[5]   ROLE OF DISLOCATIONS IN SEMI-INSULATION MECHANISM IN UNDOPED LEC GAAS CRYSTAL [J].
KAMEJIMA, T ;
SHIMURA, F ;
MATSUMOTO, Y ;
WATANABE, H ;
MATSUI, J .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (11) :L721-L723
[6]   OPTICAL OBSERVATION OF INHOMOGENEITY OF CHROMIUM-DOPED SEMI-INSULATING GAAS [J].
KITAHARA, K ;
OZEKI, M ;
SHIBATOMI, A .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (02) :207-211
[7]  
LOHNERT K, 1986, SEMIINSUL 3 5 MATERI, P267
[8]  
LOHNERT K, 1981, I PHYS C SER, V60, P179
[9]   FSGO POINT-CHARGE MODELS - THEIR ACCURACY AND EXTENSION TO HIGHER GAUSSIANS [J].
MARTIN, D ;
HALL, GG .
THEORETICA CHIMICA ACTA, 1981, 59 (03) :281-290
[10]  
MARTIN S, 1981, I PHYS C SER, V60, P287