DYNAMIC CONDUCTIVITY IN THE INFRARED FROM IMPURITY SCATTERING IN A POLAR SEMICONDUCTOR

被引：34

作者：

SERNELIUS, BE

机构：

[1] OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN 37831

[2] UNIV TENNESSEE,DEPT PHYS,KNOXVILLE,TN 37996

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.36.1080

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1080 / 1089

页数：10

共 13 条

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[6] OPTICAL-PROPERTIES OF TRANSPARENT AND HEAT-REFLECTING INDIUM TIN OXIDE-FILMS - THE ROLE OF IONIZED IMPURITY SCATTERING [J].

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[8] INFLUENCE OF A MAGNETIC-FIELD ON HIGH-FREQUENCY RELAXATION-TIME IN N-TYPE POLAR SEMICONDUCTORS [J].

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