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EFFECTS OF HIGH PHOSPHORUS CONCENTRATION ON DIFFUSION INTO SILICON
被引:72
作者
:
DUFFY, MC
论文数:
0
引用数:
0
h-index:
0
DUFFY, MC
BARSON, F
论文数:
0
引用数:
0
h-index:
0
BARSON, F
FAIRFIEL.JM
论文数:
0
引用数:
0
h-index:
0
FAIRFIEL.JM
SCHWUTTK.GH
论文数:
0
引用数:
0
h-index:
0
SCHWUTTK.GH
机构
:
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1968年
/ 115卷
/ 01期
关键词
:
D O I
:
10.1149/1.2411027
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:84 / &
相关论文
共 18 条
[1]
ON STRAIN-ENHANCED DIFFUSION IN METALS .1. DEFECT MODELS
[J].
BALLUFF, RW
论文数:
0
引用数:
0
h-index:
0
BALLUFF, RW
;
RUOFF, AL
论文数:
0
引用数:
0
h-index:
0
RUOFF, AL
.
JOURNAL OF APPLIED PHYSICS,
1963,
34
(06)
:1634
-&
[2]
GUMMEL GH, 1961, P IRE, V49, P834
[3]
DIFFUSANT IMPURITY-CONCENTRATION PROFILES IN THIN LAYERS ON SILICON
[J].
ILES, PA
论文数:
0
引用数:
0
h-index:
0
ILES, PA
;
LEIBENHAUT, B
论文数:
0
引用数:
0
h-index:
0
LEIBENHAUT, B
.
SOLID-STATE ELECTRONICS,
1962,
5
(SEP-O)
:331
-&
[4]
DISLOCATION-INDUCED DEVIATION OF PHOSPHORUS-DIFFUSION PROFILES IN SILICON
[J].
JOSHI, ML
论文数:
0
引用数:
0
h-index:
0
JOSHI, ML
;
DASH, S
论文数:
0
引用数:
0
h-index:
0
DASH, S
.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1966,
10
(06)
:446
-&
[5]
DIFFUSION-INDUCED IMPERFECTIONS IN SILICON
[J].
JOSHI, ML
论文数:
0
引用数:
0
h-index:
0
JOSHI, ML
;
WILHELM, F
论文数:
0
引用数:
0
h-index:
0
WILHELM, F
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1965,
112
(2P1)
:185
-&
[6]
FORMATION AND COMPOSITION OF SURFACE LAYERS AND SOLUBILITY LIMITS OF PHOSPHORUS DURING DIFFUSION IN SILICON
[J].
KOOI, E
论文数:
0
引用数:
0
h-index:
0
KOOI, E
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1964,
111
(12)
:1383
-1381
[7]
DIFFUDION-INDUCED STRESS AND LATTICE DISORDERS IN SILICON
[J].
LAWRENCE, JE
论文数:
0
引用数:
0
h-index:
0
LAWRENCE, JE
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(08)
:819
-&
[8]
COOPERATIVE DIFFUSION EFFECT
[J].
LAWRENCE, JE
论文数:
0
引用数:
0
h-index:
0
LAWRENCE, JE
.
JOURNAL OF APPLIED PHYSICS,
1966,
37
(11)
:4106
-+
[9]
DIFFUSION OF PHOSPHORUS INTO SILICON
[J].
MAEKAWA, S
论文数:
0
引用数:
0
h-index:
0
MAEKAWA, S
.
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN,
1962,
17
(10)
:1592
-&
[10]
CONTROL OF DIFFUSION INDUCED DISLOCATIONS IN PHOSPHORUS DIFFUSED SILICON
[J].
MCDONALD, RA
论文数:
0
引用数:
0
h-index:
0
MCDONALD, RA
;
EHLENBERGER, GG
论文数:
0
引用数:
0
h-index:
0
EHLENBERGER, GG
;
HUFFMAN, TR
论文数:
0
引用数:
0
h-index:
0
HUFFMAN, TR
.
SOLID-STATE ELECTRONICS,
1966,
9
(08)
:807
-+
←
1
2
→
共 18 条
[1]
ON STRAIN-ENHANCED DIFFUSION IN METALS .1. DEFECT MODELS
[J].
BALLUFF, RW
论文数:
0
引用数:
0
h-index:
0
BALLUFF, RW
;
RUOFF, AL
论文数:
0
引用数:
0
h-index:
0
RUOFF, AL
.
JOURNAL OF APPLIED PHYSICS,
1963,
34
(06)
:1634
-&
[2]
GUMMEL GH, 1961, P IRE, V49, P834
[3]
DIFFUSANT IMPURITY-CONCENTRATION PROFILES IN THIN LAYERS ON SILICON
[J].
ILES, PA
论文数:
0
引用数:
0
h-index:
0
ILES, PA
;
LEIBENHAUT, B
论文数:
0
引用数:
0
h-index:
0
LEIBENHAUT, B
.
SOLID-STATE ELECTRONICS,
1962,
5
(SEP-O)
:331
-&
[4]
DISLOCATION-INDUCED DEVIATION OF PHOSPHORUS-DIFFUSION PROFILES IN SILICON
[J].
JOSHI, ML
论文数:
0
引用数:
0
h-index:
0
JOSHI, ML
;
DASH, S
论文数:
0
引用数:
0
h-index:
0
DASH, S
.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1966,
10
(06)
:446
-&
[5]
DIFFUSION-INDUCED IMPERFECTIONS IN SILICON
[J].
JOSHI, ML
论文数:
0
引用数:
0
h-index:
0
JOSHI, ML
;
WILHELM, F
论文数:
0
引用数:
0
h-index:
0
WILHELM, F
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1965,
112
(2P1)
:185
-&
[6]
FORMATION AND COMPOSITION OF SURFACE LAYERS AND SOLUBILITY LIMITS OF PHOSPHORUS DURING DIFFUSION IN SILICON
[J].
KOOI, E
论文数:
0
引用数:
0
h-index:
0
KOOI, E
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1964,
111
(12)
:1383
-1381
[7]
DIFFUDION-INDUCED STRESS AND LATTICE DISORDERS IN SILICON
[J].
LAWRENCE, JE
论文数:
0
引用数:
0
h-index:
0
LAWRENCE, JE
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(08)
:819
-&
[8]
COOPERATIVE DIFFUSION EFFECT
[J].
LAWRENCE, JE
论文数:
0
引用数:
0
h-index:
0
LAWRENCE, JE
.
JOURNAL OF APPLIED PHYSICS,
1966,
37
(11)
:4106
-+
[9]
DIFFUSION OF PHOSPHORUS INTO SILICON
[J].
MAEKAWA, S
论文数:
0
引用数:
0
h-index:
0
MAEKAWA, S
.
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN,
1962,
17
(10)
:1592
-&
[10]
CONTROL OF DIFFUSION INDUCED DISLOCATIONS IN PHOSPHORUS DIFFUSED SILICON
[J].
MCDONALD, RA
论文数:
0
引用数:
0
h-index:
0
MCDONALD, RA
;
EHLENBERGER, GG
论文数:
0
引用数:
0
h-index:
0
EHLENBERGER, GG
;
HUFFMAN, TR
论文数:
0
引用数:
0
h-index:
0
HUFFMAN, TR
.
SOLID-STATE ELECTRONICS,
1966,
9
(08)
:807
-+
←
1
2
→