EFFECTS OF HIGH PHOSPHORUS CONCENTRATION ON DIFFUSION INTO SILICON

被引：72

作者：

DUFFY, MC

BARSON, F

FAIRFIEL.JM

SCHWUTTK.GH

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1968年 / 115卷 / 01期

关键词：

D O I：

10.1149/1.2411027

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：84 / &

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