TEMPERATURE-DEPENDENCE OF LOW-FREQUENCY CHARACTERISTICS OF JUNCTION FIELD-EFFECT TRANSISTORS

被引：1

作者：

GRIMBLEBY, JB ^{[1
]}

SANGHERA, GS ^{[1
]}

机构：

[1] UNIV READING, JJ THOMSON PHYS LAB, READING RG6 2AF, BERKSHIRE, ENGLAND

来源：

RADIO AND ELECTRONIC ENGINEER | 1977年 / 47卷 / 06期

关键词：

D O I：

10.1049/ree.1977.0041

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：277 / 282

页数：6

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[3]

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[4]

EVANS LL, 1964, ELECTROTECHNOLOGY, V7, P93

[5]

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[6] CONDITIONS FOR A TEMPERATURE COMPENSATED SILICON FIELD EFFECT TRANSISTOR [J].

HOERNI, JA ;

WEIR, B .

PROCEEDINGS OF THE IEEE, 1963, 51 (07) :1058-&

[7] THE COMBINATION OF RESISTIVITIES IN SEMICONDUCTORS [J].

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LARKHOROVITZ, K .

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[9]

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[10]

1969, TP1112 MULL APPL NOT

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