ENERGY-BAND ALIGNMENT IN GAAS (AL,GA)AS HETEROSTRUCTURES

被引：13

作者：

BATEY, J

WRIGHT, SL

机构：

来源：

SURFACE SCIENCE | 1986年 / 174卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(86)90429-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：320 / 323

页数：4

相关论文

共 9 条

[1] ELECTRICAL CHARACTERIZATION OF GAAS/ALGAAS SEMICONDUCTOR-INSULATOR-SEMICONDUCTOR CAPACITORS AND APPLICATION TO THE MEASUREMENT OF THE GAAS/ALGAAS BAND-GAP DISCONTINUITY
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[2] ENERGY-BAND ALIGNMENT IN GAAS - (AL,GA)AS HETEROSTRUCTURES - THE DEPENDENCE ON ALLOY COMPOSITION
BATEY, J
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[3] ENERGY BAND-GAP DISCONTINUITIES IN GAAS-(AL,GA)AS HETEROJUNCTIONS
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[7] NEGATIVE CHARGE, BARRIER HEIGHTS, AND THE CONDUCTION-BAND DISCONTINUITY IN ALXGA1-XAS CAPACITORS
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MORKOC, H
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 2844 - 2853
[8] Kuech T.F., COMMUNICATION
[9] ACCURATE ELECTRON-PROBE DETERMINATION OF ALUMINUM COMPOSITION IN (AL,GA) AS AND CORRELATION WITH THE PHOTOLUMINESCENCE PEAK
MILLER, NC
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[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) : 512 - 515