Photoreflectance characterisation of GaAs and GaAs/GaAlAs structures grown by MOCVD

被引：32
作者：
Misiewicz, J [1 ]
Jezierski, K [1 ]
Sitarek, P [1 ]
Markiewicz, P [1 ]
Korbutowicz, R [1 ]
Panek, M [1 ]
Sciana, B [1 ]
Tlaczala, M [1 ]
机构：
[1] WROCLAW TECH UNIV,INST ELECTRON TECHNOL,PL-50372 WROCLAW,POLAND
来源：
ADVANCED MATERIALS FOR OPTICS AND ELECTRONICS | 1995年 / 5卷 / 06期
关键词：
photoreflectance spectroscopy; MOCVD; GaAs; GaAlAs; heterostructures; quantum wells; surface; interface; Kramers-Kronig analysis;
D O I：
10.1002/amo.860050605
中图分类号：
O69 [应用化学];
学科分类号：
081704 ;
摘要：
Epitaxial undoped and doped (Si and tn) GaAs and GaAlAs layers as well as heterostructures Of GaAs/GaAlAs have been grown in an atmospheric pressure, vertical MOCVD system. Room temperature photoreflectance (PR) has been applied to characterise the layers and heterostructures as well as multiple quantum wells, The surface- and interface-related PR has been studied by application of Kramers-Kronig analysis, A decomposition of the PR spectrum into spectra connected with the surface region and with the interface has been proposed.
引用
收藏
页码：321 / 327
页数：7
相关论文
共 50 条
  • [21] Excitons localization effects in GaAsN/GaAs epilayers grown by MOCVD
    Saidi, F
    Hassen, F
    Maaref, H
    Auvray, L
    Dumont, H
    Monteil, Y
    MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2002, 21 (1-2): : 245 - 249
  • [22] The influence of the growth temperature and interruption time on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods
    Jasik, A.
    Wnuk, A.
    Wojcik-Jedlinska, A.
    Jakiela, R.
    Muszalski, J.
    Strupinski, W.
    Bugajski, M.
    JOURNAL OF CRYSTAL GROWTH, 2008, 310 (11) : 2785 - 2792
  • [23] InGaAs/GaAs/AlGaAs lasers emitting at a wavelength of 1190 nm grown by MOCVD epitaxy on GaAs substrate
    D. A. Vinokurov
    D. N. Nikolaev
    N. A. Pikhtin
    A. L. Stankevich
    V. V. Shamakhov
    M. G. Rastegaeva
    A. V. Rozhkov
    I. S. Tarasov
    Semiconductors, 2010, 44 : 1592 - 1596
  • [24] The influence of the growth rate and V/III ratio on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods
    Jasik, A.
    Wnuk, A.
    Gaca, J.
    Wojcik, M.
    Wojcik-Jedlinska, A.
    Muszalski, J.
    Strupinski, W.
    JOURNAL OF CRYSTAL GROWTH, 2009, 311 (19) : 4423 - 4432
  • [25] Growth temperature effects on boron incorporation and optical properties of BGaAs/GaAs grown by MOCVD
    Hamila, R.
    Saidi, F.
    Rodriguez, P. H.
    Auvray, L.
    Monteil, Y.
    Maaref, H.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 506 (01) : 10 - 13
  • [26] Scanning photoluminescence of GaAlAs/GaAs/GaAlAs binary heterostructure
    V. M. Lakhov
    V. B. Mityukhlyaev
    A. E. Pravdivtsev
    P. A. Todua
    V. N. Faifer
    Measurement Techniques, 2000, 43 : 422 - 424
  • [27] Photoluminescence of GaAlAs/GaAs quantum wells grown by metalorganic chemical vapor deposition
    Song, XW
    Qu, Y
    Li, M
    Gao, X
    Li, XQ
    Zhang, XD
    ELECTRO-OPTIC AND SECOND HARMONIC GENERATION MATERIALS, DEVICES, AND APPLICATIONS II, 1998, 3556 : 170 - 172
  • [28] EPITAXIAL STRUCTURES OF GAAS/GAALAS ON GE SUBSTRATES BY MOVPE FOR PHOTOVOLTAIC APPLICATIONS
    FLORES, C
    BOLLANI, B
    CAMPESATO, R
    PASSONI, D
    TIMO, GL
    MICROELECTRONIC ENGINEERING, 1992, 18 (1-2) : 175 - 188
  • [29] Scanning photoluminescence of GaAlAs/GaAs/GaAlAs binary heterostructure
    Lakhov, VM
    Mityukhlyaev, VB
    Pravdivtsev, AE
    Todua, PA
    Faifer, VN
    MEASUREMENT TECHNIQUES, 2000, 43 (05) : 422 - 424
  • [30] Strained GaAsSb/GaAs QW structures grown by MBE on GaAs (100) for applications near 1.3 micron
    Sadofyev, Y. G.
    Samal, N.
    JOURNAL OF CRYSTAL GROWTH, 2010, 312 (02) : 305 - 309
12345