Photoreflectance characterisation of GaAs and GaAs/GaAlAs structures grown by MOCVD

被引：32
|
作者：
Misiewicz, J [1 ]
Jezierski, K [1 ]
Sitarek, P [1 ]
Markiewicz, P [1 ]
Korbutowicz, R [1 ]
Panek, M [1 ]
Sciana, B [1 ]
Tlaczala, M [1 ]
机构：
[1] WROCLAW TECH UNIV,INST ELECTRON TECHNOL,PL-50372 WROCLAW,POLAND
来源：
ADVANCED MATERIALS FOR OPTICS AND ELECTRONICS | 1995年 / 5卷 / 06期
关键词：
photoreflectance spectroscopy; MOCVD; GaAs; GaAlAs; heterostructures; quantum wells; surface; interface; Kramers-Kronig analysis;
D O I：
10.1002/amo.860050605
中图分类号：
O69 [应用化学];
学科分类号：
081704 ;
摘要：
Epitaxial undoped and doped (Si and tn) GaAs and GaAlAs layers as well as heterostructures Of GaAs/GaAlAs have been grown in an atmospheric pressure, vertical MOCVD system. Room temperature photoreflectance (PR) has been applied to characterise the layers and heterostructures as well as multiple quantum wells, The surface- and interface-related PR has been studied by application of Kramers-Kronig analysis, A decomposition of the PR spectrum into spectra connected with the surface region and with the interface has been proposed.
引用
收藏
页码：321 / 327
页数：7
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