COMPUTER-SIMULATION OF ION-IMPLANTATION INTO CRYSTALLINE TARGETS

We have developed a new binary collision code called CTRIM to simulate ion implantation effects in crystalline solids. The model and the algorithm are shortly elucidated. Different interatomic potentials and different models for the electronic stopping can be employed alternatively. Thermal vibrations of target atoms are taken into account. The simulation code is applied to calculate ion range profiles of 35 and 200 keV B+ implantations into (100) silicon. Implantations in both channel and "random" directions are considered. The choice of an appropriate model for the electronic stopping is discussed. The best fit to experimental data is obtained for the semi-empirical model of Oen and Robinson [Nucl. Instr. and Meth. 132 (1976) 647]. Further, backscattering yields for the oblique implantation of 80 keV B+ into (100) silicon are calculated. The dependence of the backscattering yield on the angle of incidence is influenced by the crystalline structure of the target.