INTERNAL FIELD EMISSION AT NARROW SILICON AND GERMANIUM P-N JUNCTIONS

被引：119
作者：
CHYNOWETH, AG
FELDMANN, WL
LEE, CA
LOGAN, RA
PEARSON, GL
AIGRAIN, P
机构：
来源：
PHYSICAL REVIEW | 1960年 / 118卷 / 02期
关键词：
D O I：
10.1103/PhysRev.118.425
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：425 / 434
页数：10
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