PHOTOEMISSION-STUDY ON INITIAL OXIDATION OF SI SURFACES BY SUPER-PURE OXYGEN GAS

被引：10
|
作者：
OSHIMA, M [1 ]
SUGAHARA, H [1 ]
KAWAMURA, N [1 ]
YABUMOTO, N [1 ]
MINEGISHI, K [1 ]
机构：
[1] NIPPON TELEGRAPH & TEL PUBL CORP, LSI LABS, ATSUGI, KANAGAWA 24301, JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1991年 / 30卷 / 01期
关键词：
SYNCHROTRON RADIATION; PHOTOEMISSION SPECTROSCOPY; SI SURFACE; SUPER-PURE OXYGEN GAS; INITIAL OXIDATION;
D O I：
10.1143/JJAP.30.116
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Initial oxidation processes of clean Si(100) surfaces oxidized by super-pure and normal-grade oxygen gases are analyzed by synchrotron radiation photoemission spectroscopy to investigate the effect of water molecule impurities on oxidation features. A significant difference in initial oxidation rate between the two oxygen gases is found for the sputter-cleaned Si(100)2 x 1 surface and the Ag-deposited Si(100) surface. Furthermore, the band bending relaxation during oxidation is observed only for the normal-grade oxygen gas with about 70 ppm water impurity. These oxidation enhancement and band bending relaxation phenomena can be attributed to water molecule impurities.
引用
收藏
页码：116 / 120
页数：5
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