CATHODOLUMINESCENCE PROPERTIES OF UNDOPED AND ZN-DOPED ALXGA1-XN GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：14
作者：
ITOH, K
AMANO, H
HIRAMATSU, K
AKASAKI, I
机构：
[1] Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku Nagoya, 464-01, Furo-cho
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 08期
关键词：
ZN-DOPED ALXGA1-XN; METALORGANIC VAPOR PHASE EPITAXY; CATHODOLUMINESCENCE; ULTRAVIOLET EMISSION BAND; VIOLET-BLUE EMISSION BAND; BLUE-GREEN EMISSION BAND;
D O I：
10.1143/JJAP.30.1604
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Cathodoluminescence of undoped and Zn-doped AlxGa1-xN epitaxial layers grown by Metalorganic Vapor Phase Epitaxy (MOVPE) in the composition range of 0 less-than-or-equal-to x less-than-or-equal-to 0.3 has been studied at room temperature. The dominant emission of undoped AlxGa1-xN grown at 1030-degrees-C is a near-band-edge emission (UV band), while that of Zn-doped Al(x)Ga1-xN grown at 1030-degrees-C is a violet-blue one (VB band), and that of Zn-doped AlxGa1-xN grown at 910-degrees-C is a blue-green one (BG band). Each emission band shifts toward a higher-energy side with increasing x. The compositional dependence of the peak energy of the UV band is similar to that of the band gap energy. On the other hand, the compositional dependences of the VB band and BG band are somewhat smaller than that of the band gap energy.
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页码：1604 / 1608
页数：5
相关论文
共 27 条
[1]   ZN RELATED ELECTROLUMINESCENT PROPERTIES IN MOVPE GROWN GAN [J].
AMANO, H ;
HIRAMATSU, K ;
KITO, M ;
SAWAKI, N ;
AKASAKI, I .
JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :79-82
[2]   EFFECTS OF THE BUFFER LAYER IN METALORGANIC VAPOR-PHASE EPITAXY OF GAN ON SAPPHIRE SUBSTRATE [J].
AMANO, H ;
AKASAKI, I ;
HIRAMATSU, K ;
KOIDE, N ;
SAWAKI, N .
THIN SOLID FILMS, 1988, 163 :415-420
[3]   P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI) [J].
AMANO, H ;
KITO, M ;
HIRAMATSU, K ;
AKASAKI, I .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12) :L2112-L2114
[4]   METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER [J].
AMANO, H ;
SAWAKI, N ;
AKASAKI, I ;
TOYODA, Y .
APPLIED PHYSICS LETTERS, 1986, 48 (05) :353-355
[5]  
BARANOV BV, 1982, SOV PHYS SEMICOND+, V16, P819
[6]  
BARANOV BV, 1978, PHYS STATUS SOLIDI, V49, P6293
[7]   RECOMBINATION MECHANISMS IN GAN-ZN [J].
BOULOU, M ;
FURTADO, M ;
JACOB, G ;
BOIS, D .
JOURNAL OF LUMINESCENCE, 1979, 18-9 (JAN) :767-770
[8]   CATHODOLUMINESCENCE STUDY OF ZN DOPED GAN [J].
BOULOU, M ;
JACOB, G ;
BOIS, D .
REVUE DE PHYSIQUE APPLIQUEE, 1978, 13 (11) :555-563
[9]   PHOTOCONDUCTIVITY OF ZN-DOPED GAN [J].
EJDER, E ;
FAGERSTROM, PO .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (04) :289-292
[10]  
HAGEN J, 1982, J PHYS C SOLID STATE, V11, pL143
123