OPTICAL STUDIES OF ELECTRIC-FIELD DOMAINS IN GAAS-ALXGA1-XAS SUPERLATTICES

被引:93
|
作者
GRAHN, HT
SCHNEIDER, H
VONKLITZING, K
机构
[1] Max-Planck-Institut F̈r Festkörperforschung, D-7000 Stuttgart 80
来源
PHYSICAL REVIEW B | 1990年 / 41卷 / 05期
关键词
D O I
10.1103/PhysRevB.41.2890
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The spatial distribution of an electric field parallel to the growth axis in undoped GaAs-AlxGa1-xAs superlattices under optical excitation is investigated by photocurrent-voltage measurements and photoluminescence (PL) spectroscopy. At low excitation densities the applied electric field is uniform throughout the superlattice. At high excitation densities the electric field breaks up into regions of different field strengths, electric field domains. These field strengths are directly related to the conduction-subband spacings in the superlattice. The spatial distribution, i.e., the location of the different domains along the growth axis, is determined by measuring the PL spectrum at different excitation wavelengths. The space charge located at the domain boundaries is shown to be electrons. © 1990 The American Physical Society.
引用
收藏
页码:2890 / 2899
页数:10
相关论文
共 50 条
  • [21] Topographical, compositional, and dopant contrast from cleavage surfaces of GaAs-AlxGa1-xAs superlattices
    Castell, MR
    Perovic, DD
    Howie, A
    Ritchie, DA
    Lavoie, C
    Tiedje, T
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1995, 1995, 146 : 281 - 284
  • [22] ANOMALOUS ELECTRICAL AND OPTICAL CHARACTERISTICS OF GAAS-ALXGA1-XAS HETEROSTRUCTURE MATERIALS
    WAKEFIELD, B
    STEVENSON, JL
    REDSTALL, RM
    AMBRIDGE, T
    APPLIED PHYSICS LETTERS, 1979, 35 (04) : 347 - 349
  • [23] MAGNETOOPTICS IN GAAS-ALXGA1-XAS SINGLE HETEROJUNCTIONS
    PLAUT, AS
    KUKUSHKIN, IV
    VONKLITZING, K
    PLOOG, K
    PHYSICAL REVIEW B, 1990, 42 (09): : 5744 - 5750
  • [24] PICOSECOND RAMAN STUDIES OF THE OPTICAL PHONONS IN THE ALXGA1-XAS LAYERS OF GAAS-ALXGA1-XAS MULTIPLE-QUANTUM-WELL STRUCTURES
    TSEN, KT
    MORKOC, H
    PHYSICAL REVIEW B, 1988, 37 (12): : 7137 - 7139
  • [25] GAAS-ALXGA1-XAS HETEROSTRUCTURE LASER WITH SEPARATE OPTICAL AND CARRIER CONFINEMENT
    CASEY, HC
    PANISH, MB
    SCHLOSSE.WO
    PAOLI, TL
    JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) : 322 - 333
  • [26] STRUCTURAL AND OPTICAL-PROPERTIES OF GAAS-ALXGA1-XAS QUANTUM WELLS
    WOODBRIDGE, K
    DAWSON, P
    GOWERS, JP
    FOXON, CT
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 163 - 166
  • [27] HIGH-FIELD TRANSPORT IN GAAS-ALXGA1-XAS HETEROJUNCTION LAYERS
    KEEVER, M
    DRUMMOND, T
    MORKOC, H
    HESS, K
    STREETMAN, BG
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) : 1233 - 1233
  • [28] SOME EFFECTS OF A LONGITUDINAL ELECTRIC-FIELD ON THE PHOTO-LUMINESCENCE OF PARA-DOPED GAAS-ALXGA1-XAS QUANTUM WELL HETEROSTRUCTURES
    MILLER, RC
    GOSSARD, AC
    APPLIED PHYSICS LETTERS, 1983, 43 (10) : 954 - 956
  • [29] PHOTOCURRENT SPECTROSCOPY OF GAAS/ALXGA1-XAS QUANTUM-WELLS IN AN ELECTRIC-FIELD
    COLLINS, RT
    VONKLITZING, K
    PLOOG, K
    PHYSICAL REVIEW B, 1986, 33 (06): : 4378 - 4381
  • [30] Comparative Raman scattering studies of GaAs/AlxGa1-xAs and AlxGa1-xAs/AlAs superlattices
    Zhang, W
    Han, HX
    Chen, Y
    Li, GH
    Wang, ZP
    JOURNAL OF INFRARED AND MILLIMETER WAVES, 1999, 18 (03) : 189 - 194