OPTICAL STUDIES OF ELECTRIC-FIELD DOMAINS IN GAAS-ALXGA1-XAS SUPERLATTICES

被引:93
|
作者
GRAHN, HT
SCHNEIDER, H
VONKLITZING, K
机构
[1] Max-Planck-Institut F̈r Festkörperforschung, D-7000 Stuttgart 80
来源
PHYSICAL REVIEW B | 1990年 / 41卷 / 05期
关键词
D O I
10.1103/PhysRevB.41.2890
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The spatial distribution of an electric field parallel to the growth axis in undoped GaAs-AlxGa1-xAs superlattices under optical excitation is investigated by photocurrent-voltage measurements and photoluminescence (PL) spectroscopy. At low excitation densities the applied electric field is uniform throughout the superlattice. At high excitation densities the electric field breaks up into regions of different field strengths, electric field domains. These field strengths are directly related to the conduction-subband spacings in the superlattice. The spatial distribution, i.e., the location of the different domains along the growth axis, is determined by measuring the PL spectrum at different excitation wavelengths. The space charge located at the domain boundaries is shown to be electrons. © 1990 The American Physical Society.
引用
收藏
页码:2890 / 2899
页数:10
相关论文
共 50 条
  • [11] ZONE FOLDING AND SUBBAND DISPERSIONS IN GAAS-ALXGA1-XAS(001) SUPERLATTICES
    GELL, MA
    HERBERT, DC
    PHYSICAL REVIEW B, 1987, 35 (18): : 9591 - 9604
  • [12] INTERSUBBAND TRANSITIONS IN GAAS-ALXGA1-XAS MODULATION-DOPED SUPERLATTICES
    NAKAYAMA, M
    KUWAHARA, H
    KATO, H
    KUBOTA, K
    APPLIED PHYSICS LETTERS, 1987, 51 (21) : 1741 - 1743
  • [13] ELECTRON AND HOLE IMPACT IONIZATION COEFFICIENTS IN GAAS-ALXGA1-XAS SUPERLATTICES
    JUANG, FY
    DAS, U
    NASHIMOTO, Y
    BHATTACHARYA, PK
    APPLIED PHYSICS LETTERS, 1985, 47 (09) : 972 - 974
  • [14] ELECTRIC-FIELD DEPENDENCE OF EXCITON OSCILLATOR-STRENGTHS IN GAAS-ALXGA1-XAS QUANTUM WELLS STUDIED BY PHOTOCURRENT SPECTROSCOPY
    YU, PW
    SANDERS, GD
    EVANS, KR
    REYNOLDS, DC
    BAJAJ, KK
    STUTZ, CE
    JONES, RL
    PHYSICAL REVIEW B, 1989, 40 (05): : 3151 - 3155
  • [15] PHOTOCONDUCTIVITY ON GAAS-ALXGA1-XAS HETEROSTRUCTURES
    STEIN, D
    EBERT, G
    VONKLITZING, K
    WEIMANN, G
    SURFACE SCIENCE, 1984, 142 (1-3) : 406 - 411
  • [16] INDEX OF REFRACTION OF GAAS-ALXGA1-XAS SUPERLATTICES AND MULTIPLE QUANTUM-WELLS
    KAHEN, KB
    LEBURTON, JP
    SUPERLATTICES AND MICROSTRUCTURES, 1987, 3 (03) : 251 - 256
  • [17] VALENCE SUBBANDS AND ACCEPTOR LEVELS IN P-TYPE GAAS-ALXGA1-XAS SUPERLATTICES
    LOU, B
    FENG, ZC
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (09) : 1741 - 1745
  • [18] MICROSCOPIC CALCULATION OF ELECTRIC-FIELD EFFECTS IN GAAS/ALXGA1-XAS/GAAS TUNNEL STRUCTURES
    KO, DYK
    INKSON, JC
    PHYSICAL REVIEW B, 1988, 38 (17): : 12416 - 12420
  • [19] PHOTODIODES BASED ON GAAS-ALXGA1-XAS HETEROJUNCTIONS
    BERGMANN, YV
    KOROLKOV, VI
    LARIONOV, VR
    NIKITIN, VG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (10): : 1152 - 1155
  • [20] PHONONS IN THE ALLOY SUPERLATTICE GAAS-ALXGA1-XAS
    KOBAYASHI, A
    ROY, A
    PHYSICAL REVIEW B, 1987, 35 (05): : 2237 - 2242