Wide-Bandgap Power Devices Adoption gathers momentum

被引：37

作者：

Bindra, Ashok

机构：

来源：

IEEE POWER ELECTRONICS MAGAZINE | 2018年 / 5卷 / 01期

关键词：

Intelligent buildings - Medical applications - Wide band gap semiconductors - Automation - Energy gap - Gallium nitride - Hybrid vehicles - III-V semiconductors - Smart power grids - Commerce - Electric power transmission networks;

D O I：

10.1109/MPEL.2017.2782404

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As power electronics continues to extend into renewable energy markets, smart grids, smart homes, transportation electrification, electric and hybrid electric vehicles (EV/HEVs), and other emerging industrial and medical applications, more designers are attracted to the wide-bandgap (WBG) power devices, e.g., silicon carbide (SiC) and gallium nitride (GaN). In the past few years, engineers have spent time understanding the virtues of these emerging power devices and their drawbacks, e.g., reliability, cost, and availability. Today, many analysts believe that engineers are transitioning from education mode to implementation mode. According to research firm Yole D?veloppement's technology and market analyst Hong Lin, »We are gradually going from the customer awareness and education stage to the customer trial and adoption stage. And this is especially true for SiC transistors.» © 2014 IEEE.

引用

页码：22 / 27

页数：6