INFLUENCE OF TEMPERATURE ON THE EFFICIENCY OF ANNIHILATION OF PRIMARY RADIATION DEFECTS IN HIGH-RESISTIVITY SILICON SUBJECTED TO GAMMA-IRRADIATION

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作者：
LUKASHEVICH, TA
MIZRUKHIN, LV
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1989年 / 23卷 / 05期
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O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：541 / 543
页数：3
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