PROPERTIES OF GAP GREEN-LIGHT-EMITTING DIODES GROWN BY LIQUID-PHASE EPITAXY

被引：12
作者：
SHIH, KK
PETTIT, GD
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1968年 / 39卷 / 11期
关键词：
D O I：
10.1063/1.1655918
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：5025 / &
相关论文
共 22 条
[1]   GROWTH OF LARGE SINGLE CRYSTALS OF GALLIUM PHOSPHIDE FROM A STOICHIOMETRIC MELT [J].
BLUM, SE ;
CHICOTKA, RJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) :298-&
[2]   INTRINSIC ABSORPTION-EDGE SPECTRUM OF GALLIUM PHOSPHIDE [J].
DEAN, PJ ;
THOMAS, DG .
PHYSICAL REVIEW, 1966, 150 (02) :690-&
[3]   GREEN ELECTROLUMINESCENCE FROM GALLIUM PHOSPHIDE DIODES NEAR ROOM TEMPERATURE [J].
DEAN, PJ ;
GERSHENZON, M ;
KAMINSKY, G .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (13) :5332-+
[4]  
EPSTEIN AS, 1967, T METALL SOC AIME, V239, P370
[5]   FORMATION OF BUILT-IN LIGHT-EMITTING JUNCTIONS IN SOLUTION-GROWN GAP CONTAINING SHALLOW DONORS AND ACCEPTORS [J].
FOSTER, LM ;
PLASKETT, TS ;
SCARDEFI.JE .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1966, 10 (02) :114-&
[6]   ELECTROLUMINESCENCE NEAR BAND GAP IN GALLIUM PHOSPHIDE CONTAINING SHALLOW DONOR AND ACCEPTOR LEVELS (ELECTROLUMINESCENCE P-N JUNCTIONS 77-300DEGREES K RADIATIVE RECOMBINATION E) [J].
FOSTER, LM ;
PILKUHN, M .
APPLIED PHYSICS LETTERS, 1965, 7 (03) :65-&
[7]   ELECTROLUMINESCENT RECOMBINATION NEAR THE ENERGY GAP IN GAP DIODES [J].
GERSHENZON, M ;
MIKULYAK, RM ;
LOGAN, RA ;
FOY, PW .
SOLID-STATE ELECTRONICS, 1964, 7 (02) :113-124
[8]   ELECTRICAL AND ELECTROLUMINESCENT PROPERTIES OF GALLIUM PHOSPHIDE DIFFUSED P-N JUNCTIONS [J].
GERSHENZON, M ;
LOGAN, RA ;
NELSON, DF .
PHYSICAL REVIEW, 1966, 149 (02) :580-+
[9]   BAND GAP OF GALLIUM PHOSPHIDE FROM 0 TO 900 DEGREES K AND LIGHT EMISSION FROM DIODES AT HIGH TEMPERATURES [J].
LORENZ, MR ;
PETTIT, GD ;
TAYLOR, RC .
PHYSICAL REVIEW, 1968, 171 (03) :876-&
[10]  
LORENZ MR, 1966, J PHYS SOC JPN, VS 21, P283
123