DEGRADATION OF GAAS-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION ON SI SUBSTRATES

被引:82
作者
VANDERZIEL, JP
DUPUIS, RD
LOGAN, RA
PINZONE, CJ
机构
关键词
D O I
10.1063/1.98997
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:89 / 91
页数:3
相关论文
共 9 条
[1]  
AMANN MC, 1979, ELECTRON LETT, V15, P442
[2]  
CASEY HC, 1978, HETEROSTRUCTURE LA B, pCH8
[3]   LOW-THRESHOLD HIGH-EFFICIENCY ALGAAS-GAAS DOUBLE-HETEROSTRUCTURE INJECTION-LASERS GROWN ON SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
DUPUIS, RD ;
VANDERZIEL, JP ;
LOGAN, RA ;
BROWN, JM ;
PINZONE, CJ .
APPLIED PHYSICS LETTERS, 1987, 50 (07) :407-409
[4]   RELIABILITY OF (ALGA)AS CW LASER-DIODES [J].
ETTENBERG, M ;
KRESSEL, H .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) :186-196
[5]   CONTINUOUS OPERATION OF GAAS-GA1-XALXAS DOUBLE-HETEROSTRUCTURE LASERS WITH 30 DEGREES C HALF-LIVES EXCEEDING 1000-H [J].
HARTMAN, RL ;
DYMENT, JC ;
HWANG, CJ ;
KUHN, M .
APPLIED PHYSICS LETTERS, 1973, 23 (04) :181-183
[6]   CHARACTERIZATION OF (AL,GA)AS INJECTION-LASERS USING THE LUMINESCENCE EMITTED FROM THE SUBSTRATE [J].
HARTMAN, RL ;
KOSZI, LA .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) :5731-5744
[7]   DEFECT STRUCTURE INTRODUCED DURING OPERATION OF HETEROJUNCTION GAAS LASERS [J].
PETROFF, P ;
HARTMAN, RL .
APPLIED PHYSICS LETTERS, 1973, 23 (08) :469-471
[8]   SCHOTTKY-BARRIER RESTRICTED GAALAS LASER [J].
TEMKIN, H ;
CHIN, AK ;
DUTT, BV .
ELECTRONICS LETTERS, 1982, 18 (16) :701-703
[9]   LOW THRESHOLD PULSED AND CONTINUOUS LASER OSCILLATION FROM ALGAAS/GAAS DOUBLE HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION ON SI SUBSTRATES [J].
VANDERZIEL, JP ;
DUPUIS, RD ;
LOGAN, RA ;
MIKULYAK, RM ;
PINZONE, CJ ;
SAVAGE, A .
APPLIED PHYSICS LETTERS, 1987, 50 (08) :454-456