MECHANISMS OF IMPLANT DAMAGE ANNEALING AND TRANSIENT ENHANCED DIFFUSION IN SI

被引：77
作者：
COWERN, NEB
VANDEWALLE, GFA
ZALM, PC
VANDENHOUDT, DWE
机构：
[1] Philips Research Laboratories, 5656 AA Eindhoven
来源：
APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 23期
关键词：
D O I：
10.1063/1.112483
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Interactions between self-interstitials (I) and {113} interstitial defects during annealing of Si implant damage have been studied. At low damage levels diffusion is ultrafast, driven by I released direct from the ion collision cascade. At higher damage levels, free I are quenched by nucleation of {113} defects. We show that the transient enhanced diffusion seen in most previous studies arises from the subsequent dissolution of the {113} defects. © 1994 American Institute of Physics.
引用
收藏
页码：2981 / 2983
页数：3
相关论文
共 7 条
[1]   INFLUENCE OF DAMAGE DEPTH PROFILE ON THE CHARACTERISTICS OF SHALLOW P+/N IMPLANTED JUNCTIONS [J].
CEMBALI, F ;
SERVIDORI, M ;
LANDI, E ;
SOLMI, S .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 94 (01) :315-319
[2]   EXPERIMENTS ON ATOMIC-SCALE MECHANISMS OF DIFFUSION [J].
COWERN, NEB ;
VANDEWALLE, GFA ;
GRAVESTEIJN, DJ ;
VRIEZEMA, CJ .
PHYSICAL REVIEW LETTERS, 1991, 67 (02) :212-215
[3]   REACTIONS OF POINT-DEFECTS AND DOPANT ATOMS IN SILICON [J].
COWERN, NEB ;
VANDEWALLE, GFA ;
ZALM, PC ;
OOSTRA, DJ .
PHYSICAL REVIEW LETTERS, 1992, 69 (01) :116-119
[4]  
COWERN NEB, 1993, 3RD P INT S PROC PHY, V93, P20
[5]   RAPID ANNEALING AND THE ANOMALOUS DIFFUSION OF ION-IMPLANTED BORON INTO SILICON [J].
MICHEL, AE ;
RAUSCH, W ;
RONSHEIM, PA ;
KASTL, RH .
APPLIED PHYSICS LETTERS, 1987, 50 (07) :416-418
[6]   TRANSIENT DIFFUSION OF LOW-CONCENTRATION-B IN SI DUE TO SI-29 IMPLANTATION DAMAGE [J].
PACKAN, PA ;
PLUMMER, JD .
APPLIED PHYSICS LETTERS, 1990, 56 (18) :1787-1789
[7]  
STOLK PA, IN PRESS NUCL INST B
1