SCATTERING OF HOT CARRIERS IN GERMANIUM

被引：25

作者：

CONWELL, EM

BROWN, AL

机构：

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1960年 / 15卷 / 3-4期

关键词：

D O I：

10.1016/0022-3697(60)90244-4

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：208 / 217

页数：10

共 15 条

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CONWELL, E .

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CONWELL, EM .

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CONWELL, EM .

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[6] HOT ELECTRONS AND CARRIER MULTIPLICATION IN SILICON AT LOW TEMPERATURE [J].

KAISER, W ;

WHEATLEY, GH .

PHYSICAL REVIEW LETTERS, 1959, 3 (07) :334-336

[7] ENERGY BAND STRUCTURE IN P-TYPE GERMANIUM AND SILICON [J].

KANE, EO .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1956, 1 (1-2) :82-99

[8] THE LOW TEMPERATURE ELECTRICAL CONDUCTIVITY OF NORMAL-TYPE GERMANIUM [J].

KOENIG, SH ;

GUNTHERMOHR, GR .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 2 (04) :268-283

[9] FIELD DEPENDENCE OF MOBILITY IN P-TYPE GERMANIUM [J].

MENDELSON, KS ;

BRAY, R .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1957, 70 (09) :899-900

[10]

MENDELSON KS, UNPUB COMMUNICATION

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