SURFACE-MORPHOLOGY OF METALORGANIC VAPOR-PHASE EPITAXY-GROWN GAAS OBSERVED BY ATOMIC-FORCE MICROSCOPY

被引：19

作者：

HSU, CC

WONG, TKS

WILSON, IH

机构：

[1] Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, NT

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 13期

关键词：

D O I：

10.1063/1.110679

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Steps of monolayer height (0.28 nm) are observed by atomic force microscope on a metalorganic vapor phase epitaxy grown GaAs surface. Monolayer terrace width was found to be as large as 430 nm, the same as the vicinal substrate surface. The growth mechanism is according to the classical Burton-Cabrera-Frank theory. We may have a larger (> 500 nm) terrace width and surface diffusion length if an exactly oriented [100] substrate is used.

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页码：1839 / 1841

页数：3

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共 10 条

[1] ANISOTROPIC LATERAL GROWTH IN GAAS MOCVD LAYERS ON (001) SUBSTRATES [J].

ASAI, H .

JOURNAL OF CRYSTAL GROWTH, 1987, 80 (02) :425-433

[2] MORPHOLOGICAL INSTABILITY OF A TERRACE EDGE DURING STEP-FLOW GROWTH [J].

BALES, GS ;

ZANGWILL, A .

PHYSICAL REVIEW B, 1990, 41 (09) :5500-5508

[3] MICROSCOPIC GROWTH MECHANISMS OF SEMICONDUCTORS - EXPERIMENTS AND MODELS [J].

BAUSER, E ;

STRUNK, HP .

JOURNAL OF CRYSTAL GROWTH, 1984, 69 (2-3) :561-580

[4] ATOMIC FORCE MICROSCOPE [J].

BINNIG, G ;

QUATE, CF ;

GERBER, C .

PHYSICAL REVIEW LETTERS, 1986, 56 (09) :930-933

[5] EVOLUTION OF MONOLAYER TERRACE TOPOGRAPHY ON (100) GAAS ANNEALED UNDER AN ARSINE HYDROGEN AMBIENT [J].

EPLER, JE ;

JUNG, TA ;

SCHWEIZER, HP .

APPLIED PHYSICS LETTERS, 1993, 62 (02) :143-145

[6] CONTROL OF RESIDUAL IMPURITY INCORPORATION IN TERTIARYBUTYLARSINE-GROWN GAAS [J].

HAACKE, G ;

WATKINS, SP ;

BURKHARD, H .

JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) :342-347

[7] EXTREMELY FLAT LAYER SURFACES IN LIQUID-PHASE EPITAXY OF GAAS AND ALXGA1-XAS [J].

MORLOCK, U ;

KELSCH, M ;

BAUSER, E .

JOURNAL OF CRYSTAL GROWTH, 1988, 87 (2-3) :343-349

[8] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATIONS FROM VICINAL SURFACES - A NEW APPROACH TO SURFACE-DIFFUSION MEASUREMENTS [J].

NEAVE, JH ;

DOBSON, PJ ;

JOYCE, BA ;

ZHANG, J .

APPLIED PHYSICS LETTERS, 1985, 47 (02) :100-102

[9] SURFACE-DIFFUSION AND RELATED PHENOMENA IN MBE GROWTH OF III-V COMPOUNDS [J].

NISHINAGA, T ;

SHITARA, T ;

MOCHIZUKI, K ;

CHO, KI .

JOURNAL OF CRYSTAL GROWTH, 1990, 99 (1-4) :482-490

[10] THEORETICAL-STUDY OF MODE TRANSITION BETWEEN 2D-NUCLEATION AND STEP FLOW IN MBE GROWTH OF GAAS [J].

NISHINAGA, T ;

CHO, KI .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (01) :L12-L14