CONSTRUCTIVE 3-DIMENSIONAL LITHOGRAPHY WITH ELECTRON-BEAM-INDUCED DEPOSITION FOR QUANTUM EFFECT DEVICES

被引:58
作者
KOOPS, HWP [1 ]
KRETZ, J [1 ]
RUDOLPH, M [1 ]
WEBER, M [1 ]
机构
[1] TH DARMSTADT,INST ANGEW PHYS,D-64289 DARMSTADT,GERMANY
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 06期
关键词
D O I
10.1116/1.586991
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Two- and three-dimensional patterns and structures can be grown by electron-beam induced deposition from organic and metalorganic precursors. Using a very fine electron beam in a dedicated field emission scanning electron microscope produces nanometer size deposits which extend from surfaces to heights in the micrometer range. The material is fed to the sample through a nozzle which presents a small leakage flux to the specimen chamber. Having an image processor attached to the microscope allows two- and three-dimensional deposition of material to be controlled. Selecting special speed rates for the motion of the beam generates inclined deposits even at a 90-degrees beam landing angle. Combining a tilted sample and the two-dimensional way of structuring yield three-dimensional structures. These nanostructures have very special characteristics with respect to resistivity and shape. Selecting dimethyl-gold-trifluoro-acetylacetonate as precursor, a current of 1 nA, and a low electron energy of 10 keV for the deposition process, resistors of 700 OMEGA are obtained with a specific resistivity of 10(-2) OMEGA cm.
引用
收藏
页码:2386 / 2389
页数:4
相关论文
共 7 条
[1]  
Ehrlich D.J., 1989, LASER MICROFABRICATI
[2]   TIPS FOR SCANNING TUNNELING MICROSCOPY PRODUCED BY ELECTRON-BEAM-INDUCED DEPOSITION [J].
HUBNER, B ;
KOOPS, HWP ;
PAGNIA, H ;
SOTNIK, N ;
URBAN, J ;
WEBER, M .
ULTRAMICROSCOPY, 1992, 42 :1519-1525
[3]   SHARP, VERTICAL-WALLED TIPS FOR SFM IMAGING OF STEEP OR SOFT SAMPLES [J].
KELLER, D ;
DEPUTY, D ;
ALDUINO, A ;
LUO, K .
ULTRAMICROSCOPY, 1992, 42 :1481-1489
[4]   ELECTRON-BEAM INDUCED TUNGSTEN DEPOSITION - GROWTH-RATE ENHANCEMENT AND APPLICATIONS IN MICROELECTRONICS [J].
KOHLMANNVONPLATEN, KT ;
BUCHMANN, LM ;
PETZOLD, HC ;
BRUNGER, WH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (06) :2690-2694
[5]   HIGH-RESOLUTION ELECTRON-BEAM INDUCED DEPOSITION [J].
KOOPS, HWP ;
WEIEL, R ;
KERN, DP ;
BAUM, TH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (01) :477-481
[6]   DIRECT ELECTRON-BEAM PATTERNING FOR NANOLITHOGRAPHY [J].
LEE, KL ;
HATZAKIS, M .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06) :1941-1946
[7]   NEW SELECTIVE DEPOSITION TECHNOLOGY BY ELECTRON-BEAM INDUCED SURFACE-REACTION [J].
MATSUI, S ;
MORI, K .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01) :299-304