MOLECULAR-BEAM AND SOLID-PHASE EPITAXIES OF SILICON UNDER ULTRAHIGH-VACUUM

被引：35

作者：

SHIRAKI, Y

KATAYAMA, Y

KOBAYASHI, KLI

KOMATSUBARA, KF

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1978年 / 45卷 / 01期

关键词：

D O I：

10.1016/0022-0248(78)90451-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：287 / 291

页数：5

共 8 条

[1] SOLID-PHASE TRANSPORT AND EPITAXIAL-GROWTH OF GE AND SI [J].

CANALI, C ;

MAYER, JW ;

OTTAVIANI, G ;

SIGURD, D ;

VANDERWE.W .

APPLIED PHYSICS LETTERS, 1974, 25 (01) :3-5

[2] CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI [J].

CSEPREGI, L ;

MAYER, JW ;

SIGMON, TW .

PHYSICS LETTERS A, 1975, 54 (02) :157-158

[3] SILICON CLEANING WITH HYDROGEN PEROXIDE SOLUTIONS - HIGH ENERGY ELECTRON DIFFRACTION AND AUGER ELECTRON SPECTROSCOPY STUDY [J].

HENDERSON, RC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (06) :772-+

[4]

JONA F, 1967, SURFACES INTERFACES

[5]

OTA Y, 1977, J ELECTROCHEM SOC, V124, P1745

[6] SILICON EPITAXY BY SOLID-PHASE CRYSTALLIZATION OF DEPOSITED AMORPHOUS FILMS [J].

ROTH, JA ;

ANDERSON, CL .

APPLIED PHYSICS LETTERS, 1977, 31 (10) :689-691

[7] LOW-TEMPERATURE EPITAXIAL GROWTH OF DOPED SILICON FILMS AND JUNCTIONS [J].

THOMAS, RN ;

FRANCOMBE, MH .

SOLID-STATE ELECTRONICS, 1969, 12 (10) :799-+

[8] EPITAXIAL GROWTH OF SI ON SI IN ULTRA HIGH VACUUM ( EPITAXIAL TEMPERATURE LESS THAN 550 DEGREES C E ) [J].

WIDMER, H .

APPLIED PHYSICS LETTERS, 1964, 5 (05) :108-&

← 1 →